Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

Journal Article · Sun Dec 31 23:00:00 EST 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836377· OSTI ID:201383

Kozawa, Takahiro; Kachi, Tetsu; Ohwaki, Takeshi; Taga, Yasunori ^[1]; Koide, Norikatsu; Koike, Masayoshi ^[2]

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1. Toyota Central Research and Development Labs., Inc., Aichi (Japan)
2. Toyoda Gosei Co., Ltd., Aichi (Japan)

Dislocations in GaN epitaxial layers grown on sapphire substrates have been studied by chemical etching. The authors have examined molten KOH as a defect etchant and characterized the etch pits on GaN layers. By use of molten KOH etching, etch pits were revealed on the surface of the GaN layer. All pits were hexagonal pyramids, which reflect the crystal symmetry of GaN. Results showed that molten KOH etching might be a useful method for the evaluation of the dislocations in GaN layers. The etch pit density (EPD) was typically 2 {times} 10{sup 7} cm{sup {minus}2}.

• Sponsoring Organization: USDOE
• OSTI ID: 201383
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
DISLOCATIONS
ENERGY GAP
EPITAXY
ETCHING
GALLIUM NITRIDES
MOLTEN SALTS
POTASSIUM HYDROXIDES
SCANNING ELECTRON MICROSCOPY
SURFACE PROPERTIES