Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth

Journal Article · Sun Aug 15 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93508· OSTI ID:5044259

Tsaur, B; McClelland, R W; Fan, J C.C.; Gale, R P; Salerno, J P; Vojak, B A; Bozler, C O

Single-crystal GaAs layers have been obtained by means of lateral epitaxial overgrowth seeded within stripe openings in a SiO/sub 2/ mask over GaAs layers grown on Ge-coated Si substrates. Transmission electron microscope and scanning cathodoluminescence studies indicate that the laterally overgrown GaAs layers have a dislocation density of less than 10/sup 4/ cm/sup -2/, compared to 10/sup 7/--10/sup 8/ cm/sup -2/ for the GaAs layers grown directly on the Ge/Si substrates. Initial experiments indicate that the electrical properties of the laterally overgrown layers are comparable to those of conventional GaAs epilayers grown on single-crystal GaAs substrates.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5044259
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DATA
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
INFORMATION
LAYERS
LINE DEFECTS
LUMINESCENCE
MASKING
METALS
MICROSCOPY
MONOCRYSTALS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY