GaAs analog to digital converter and memory IC's for ultra high speed transient recording
The excellent electron dynamical properties of gallium arsenide enable GaAs devices to achieve high speed performance levels many times those of corresponding silicon devices. These device performance advantages carry over into integrated circuit technologies as well, aided significantly by the fact that GaAs substrate material is available in semi-insulating (>10/sup 8/..cap omega..cm) form for very low parasitics in monolithic integrated circuits. This has led to the achievement of logic delays as low as 12.8ps at 77/sup 0/K or 16.8ps at 300/sup 0/K in the more exotic GaAs IC approaches. In the standard 1..mu..m gate length, planar MESFET GaAs circuits, ring oscillator delays of /tau/ /SUB d/ =52ps at P /SUB D/ =1mw/gate have been demonstrated, increasing to /tau/ /SUB d/ =70ps at P /SUB D/ =2mw/gate in MSI flip flop circuits (standard f /SUB toggle/ =1/5/tau/ /SUB d/ type-D flip flops toggle up to nearly 3 GHz). The planar ion implanted GaAs MESFET circuits have been fabricated in circuit complexities up to 1008 logic gates, with NOR gate delays as low as 150ps obtained in these LSI chips (e.g., a 35/tau/ /SUB d/ multiply time of 5.25ns in 8x8 bit latched parallel multiplier circuits). These 1..mu..m gate length MESFET circuits have been fabricated on up to 3'' diameter GaAs wafers using the same type of DSW optical lithography used for silicon VLSI, which is considered ample evidence that this GaAs IC technology can be cost-effective and is ready for commercialization. These paper focuses on the application of this MESFET GaAs IC technology for the types of digital memory and analog to digital converter circuits required to implement ultra high speed transient recorders.
- Research Organization:
- Gigabit Logic, Inc., Culver City, CA 90230
- OSTI ID:
- 5941947
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 30:1; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANALOG-TO-DIGITAL CONVERTERS
ARSENIC COMPOUNDS
ARSENIDES
COST
COST BENEFIT ANALYSIS
DIGITAL SYSTEMS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PERFORMANCE TESTING
PNICTIDES
RECORDING SYSTEMS
SEMICONDUCTOR DEVICES
TESTING
TRANSIENTS
TRANSISTORS