Characteristics of GaAs DCFL MESFET's and inverters exposed to high energy neutrons
- The Aerospace Corp., Los Angeles, CA (US)
This paper reports on a systematic investigation of the effects of high-energy neutrons on GaAs metal-semiconductor field effect transistors (MESFET's) and direct coupled FET logic (DCFL) gates. Measurements were made of the threshold voltage shifts and the transconductance and saturation current degradation of GaAs enhancement and depletion mode MESFET's, which comprise the DCFL logic gates, at neutron fluences ranging from 5 {times} 10{sup 13} {minus} 2 {times} 10{sup 15} n/cm{sup 2} (E{gt}keV). DCFL inverter characteristics were measured and successfully simulated with simulation program with integrated circuit emphasis (SPICE) using device parameters extracted from the neutron damaged FET's. Ring oscillator measurements were made to determine the effects of high-energy neutrons on the frequency performance of DCFL circuits. Measurements confirm that propagation delays scale inversely with the device transconductance. The results of this investigation are useful in predicting how GaAs IC's, fabricated using DCFL logic, will perform in a high-energy neutron environment.
- OSTI ID:
- 7029241
- Report Number(s):
- CONF-890723--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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360601 -- Other Materials-- Preparation & Manufacture
360605 -- Materials-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
ENVIRONMENTAL IMPACTS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
INTEGRATED CIRCUITS
IRRADIATION
LEAKAGE CURRENT
LOGIC CIRCUITS
MICROELECTRONIC CIRCUITS
NEUTRAL-PARTICLE TRANSPORT
NEUTRON TRANSPORT
PERFORMANCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS