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Characteristics of GaAs MESFET inverters exposed to high energy neutrons

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
DOI:https://doi.org/10.1109/23.7501· OSTI ID:7098926
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GaAs MESFET circuits have been exposed to high energy neutrons with fluences ranging from 1x10/sup 14/ n/cm/sup 2/ to 2x10/sup 15/ m/cm/sup 2/. Discrete transistors, inverters, and ring oscillators were characterized at each fluence. While the MESFETs exhibit significant threshold voltage shifts and transconductance and saturation current degradation over this range of neutron fluences, the authors have observed improvement in the DC characteristics of Schottky Diode FET Logic (SDFL) inverters. This unusual result has been successfully simulated using device parameters extracted from FETs damaged by exposure to high energy neutrons. Although the decrease in device transconductance results in an increase in inverter gate delay, as reflected in ring oscillator frequency measurements, the authors conclude that GaAs ICs fabricated from this logic family will remain functional after exposure to extreme neutron fluences. This is a consequence of the observed improvement in inverter noise margin evident in both measured and simulated circuit performance.

Research Organization:
Electronics Research Lab., The Aerospace Corp., P.O. Box 92957, Los Angeles, CA (US)
OSTI ID:
7098926
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:5; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INTEGRATED CIRCUITS
INVERTERS
MICROELECTRONIC CIRCUITS
NEUTRONS
NUCLEONS
PERFORMANCE TESTING
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
TRANSISTORS