Characteristics of GaAs buffered FET logic (BFL) MESFET's and inverters exposed to high-energy neutrons

Journal Article · Fri Feb 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.64632· OSTI ID:5879033

Rosenbluth, M; Bloss, W L; Tamada, W E; Janousek, B K ^[1]

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1. Electronics Research Lab., Aerospace Corp., Los Angeles, CA (US)

A systematic investigation of the effects of high-energy neutrons on GaAs metal-semiconductor field-effect transistors (MESFET's) and buffered FET logic (BFL) gates has been carried out. Discrete transistors, inverters, and ring oscillators were characterized and modeled as a function of neutron fluence. Measurements were made of the threshold voltage shifts, the transconductance degradation, and saturation current degradation of GaAs depletion mode MESFET's, which comprise the BFL logic gates, irradiated with neutron fluences ranging from 5 {times} 10{sup 13} n/cm{sup 2} to 2 {times} 10{sup 15} n/cm{sup 2} (E {gt} 10 keV). The threshold voltage was found to shift positively by 0.45 V, the transconductance decreased to 3%, and the saturation current to 1% of their unirradiated values at the highest neutron fluence (2 {times} 10{sup 15} n/cm{sup 2}). The BFL inverter characteristics were measured and successfully simulated with SPICE using device parameters extracted from the neutron damaged FET's. Ring oscillator measurement were made to determine the effects of high-energy neutrons on the frequency performance of BFL circuits. The ring oscillator frequency decreased to 9% of its unirradiated value at the highest neutron fluence.

• OSTI ID: 5879033
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 38:1; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BUFFERS
DAMAGING NEUTRON FLUENCE
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
ENERGY RANGE
EQUIPMENT
FERMIONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INVERTERS
LOGIC CIRCUITS
METALS
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
OSCILLATORS
PERFORMANCE
PNICTIDES
SATURATION
SEMICONDUCTOR DEVICES
SIMULATION
THRESHOLD ENERGY
TRANSISTORS