Characterization of the implantation damage in SiO/sub 2/ with x-ray photoelectron spectroscopy

Journal Article · Mon May 19 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96921· OSTI ID:5938585

Ajioka, T; Ushio, S

X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO/sub 2/ by ion implantation. By measuring the peak width of Si/sub 2p/ from SiO/sub 2/ which corresponds to perturbation of the SiO/sub 2/ network, good depth profiles of the damage have been obtained for implanted samples and subsequently annealed samples. The results show that the damage distributed more widely than that calculated from energy deposition and that the perturbation of the network is caused not only by radiation damage but also by the existence of impurities in the network. It has been found that the XPS method is effective to understand the atomic structure, and thus, electrical properties of SiO/sub 2/.

• Research Organization: VLSI Research and Development Center, Oki Electric Industry Company, Ltd., Tokyo, Japan
• OSTI ID: 5938585
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHALCOGENIDES
CRYSTAL STRUCTURE
DAMAGE
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ION IMPLANTATION
IONIZING RADIATIONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
X RADIATION