Semiconductor nanocrystals formed in SiO{sub 2} by ion implantation

Conference · Tue Nov 01 04:00:00 EST 1994

OSTI ID:35340

Zhu, J G; White, C W; Budai, J D; Withrow, S P; Chen, Y

Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO{sub 2} by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO{sub 2}. Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO{sub 2}.

• Research Organization: Oak Ridge National Lab., TN (United States); Oak Ridge Inst. for Science and Education, TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400; AC05-76OR00033
• OSTI ID: 35340
• Report Number(s): CONF-941144--98; ON: DE95008900
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM SELENIDES
GALLIUM ARSENIDES
GERMANIUM
GRAIN SIZE
ION IMPLANTATION
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SYNTHESIS