Growth of Ge, Si, and SiGe nanocrystals in SiO{sub 2} matrices
- Oak Ridge National Laboratory, Solid State Division, Oak Ridge, Tennessee 37831 (United States)
Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 249391
- Journal Information:
- Journal of Applied Physics, Vol. 78, Issue 7; Other Information: PBD: 1 Oct 1995
- Country of Publication:
- United States
- Language:
- English
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