Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation
Conference
·
OSTI ID:258064
- Oak Ridge National Lab., TN (United States)
- Fisk Univ., Nashville, TN (United States)
Nanocrystals of SiGe alloy have been formed inside a SiO{sub 2} matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 258064
- Report Number(s):
- CONF-9606110--2; ON: DE96012342
- Country of Publication:
- United States
- Language:
- English
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