Nanocrystals and quantum dots formed by high-dose ion implantation

Technical Report · Sun Dec 31 23:00:00 EST 1995

DOI:https://doi.org/10.2172/219351· OSTI ID:219351

White, C W; Budai, J D; Zhu, J G; Withrow, S P ^[1]; Hembree, D M ^[2]; Henderson, D O; Ueda, A; Tung, Y S; Mu, R ^[3]

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1. Oak Ridge National Lab., TN (United States)
2. Oak Ridge Y-12 Plant, TN (United States)
3. Fisk Univ., Nashville, TN (United States)

Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO{sub 2}) and crystalline (Al{sub 2}O{sub 3}) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amorphous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 219351
• Report Number(s): CONF-951155--106; ON: DE96008102
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CADMIUM SELENIDES
CADMIUM SULFIDES
COMPOSITE MATERIALS
EXPERIMENTAL DATA
GERMANIUM
GERMANIUM SILICIDES
GOLD ALLOYS
GRAIN ORIENTATION
ION IMPLANTATION
MICROSTRUCTURE
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SILICON
SILICON OXIDES
SYNTHESIS