Nanocrystals and quantum dots formed by high-dose ion implantation

Technical Report · Mon Jan 01 00:00:00 EST 1996

DOI:https://doi.org/10.2172/219351· OSTI ID:219351

White, C W; Budai, J D; Zhu, J G; Withrow, S P ^[1]; Hembree, D M ^[2]; Henderson, D O; Ueda, A; Tung, Y S; Mu, R ^[3]

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1. Oak Ridge National Lab., TN (United States)
2. Oak Ridge Y-12 Plant, TN (United States)
3. Fisk Univ., Nashville, TN (United States)

Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO{sub 2}) and crystalline (Al{sub 2}O{sub 3}) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amorphous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 219351
• Report Number(s): CONF-951155-106; ON: DE96008102; TRN: 96:010618
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: Jan 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
SYNTHESIS
ION IMPLANTATION
OPTICAL PROPERTIES
ALUMINIUM OXIDES
GOLD ALLOYS
SILICON
GERMANIUM
GERMANIUM SILICIDES
CADMIUM SELENIDES
CADMIUM SULFIDES
COMPOSITE MATERIALS
MICROSTRUCTURE
EXPERIMENTAL DATA
GRAIN ORIENTATION
PHOTOLUMINESCENCE