Compound semiconductor nanocrystals formed by sequential ion implantation

Conference · Tue Nov 01 04:00:00 EST 1994

OSTI ID:230380

White, C W; Budai, J D; Zhu, J G ^[1]

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1. and others

Ion implantation and thermal processing have been used to synthesize compound semiconductor nanocrystals (SiGe, GaAs, and CdSe) in both SiO{sub 2} and (0001) Al{sub 2}O{sub 3}. Equal doses of each constituent are implanted sequentially at energies chosen to give an overlap of the profiles. Subsequent annealing results in precipitation and the formation of compound nanocrystals. In SiO{sub 2} substrates, nanocrystals are nearly spherical and randomly oriented. In Al{sub 2}O{sub 3}, nanocrystals exhibit strong orientation both in-plane and along the surface normal.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 230380
• Report Number(s): CONF-941115--5; ON: DE96009623
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
CADMIUM SELENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
GERMANIDES
GRAIN ORIENTATION
ION IMPLANTATION
MICROSTRUCTURE
PARTICLE SIZE
PRECIPITATION
SILICA
SILICON COMPOUNDS