GaAs nanocrystals formed by sequential ion implantation
- Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)
- The Oak Ridge Y-12 Plant, P.O. Box 2009, Oak Ridge, Tennessee 37831 (United States)
- Fisk University, Nashville, Tennessee 37208 (United States)
- Vanderbilt University, Nashville, Tennessee 37235 (United States)
Sequential ion implantation of As and Ga into SiO{sub 2} and {alpha}-Al{sub 2}O{sub 3} followed by thermal annealing has been used to form zinc-blende GaAs nanocrystals in these two matrices. In SiO{sub 2}, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al{sub 2}O{sub 3}, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-84OR21400; FG05-94ER45521
- OSTI ID:
- 282056
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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