Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals

Technical Report · Sun Nov 30 23:00:00 EST 1997

DOI:https://doi.org/10.2172/564245· OSTI ID:564245

White, C W; Budai, J D; Meldrum, A L ^[1]

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1. and others

Sequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO{sub 2} and Al{sub 2}O{sub 3} matrices. In SiO{sub 2}, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit a bimodal size distribution. In Al{sub 2}O{sub 3}, nanoparticles are faceted and coherent with the matrix. Initial photoluminescence (PL) results are presented.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 564245
• Report Number(s): ORNL/CP--95414; CONF-971201--; ON: DE98001841; BR: KC0202050
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CADMIUM SULFIDES
COMPOSITE MATERIALS
EXPERIMENTAL DATA
ION IMPLANTATION
LEAD SULFIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SYNTHESIS
ZINC SULFIDES