Encapsulated nanocrystals and quantum dots formed by ion beam synthesis
- and others
High-dose ion implantation was used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and crystalline Si. When Si nanocrystals are encapsulated in SiO{sub 2}, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both Group III-V and Group II-VI) can be formed in these matrices by sequential implantation of he individual constituents, and we discuss their synthesis and some of their physical and optical properties.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464; FG05-94ER45521
- OSTI ID:
- 382425
- Report Number(s):
- CONF-960994-7; ON: DE96015234; CNN: Contract DAAH04-93-G-0123
- Resource Relation:
- Conference: IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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