Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

Conference · Tue Dec 30 23:00:00 EST 1997

OSTI ID:560457

Zhu, J G ^[1]; White, C W; Withrow, S P; Budai, J D ^[2]

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1. New Mexico State Univ., Las Cruces, NM (United States)
2. Oak Ridge National Lab., TN (United States); and others

Nanocrystals of elemental and compound semiconductors have been fabricated in SiO2 and Al2O3 matrices by the ion implantation technique. The nanocrystal size distributions can be controlled by the ion implantation energy, dose and annealing temperatures. The implantation sequence of the constituent species is found to significantly influence the formation of compound semiconductor nanocrystals. Quantum confinement effects occur for the nanocrystals with sizes smaller than the exciton diameters. The optical characterizations of these semiconductor nanocrystals include photoluminescence, optical absorption and infrared reflectance measurements.

• OSTI ID: 560457
• Report Number(s): CONF-970443--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
ION IMPLANTATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SILICA