Temperature dependence of polarization characteristics in buried facet semiconductor laser amplifiers

Journal Article · Mon Oct 01 04:00:00 EDT 1990 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.60901· OSTI ID:5937257

Lin, M S; Piccirilli, A B; Twu, Y; Dutta, N K ^[1]

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1. AT and T Bell Lab., Murray Hill, NJ (US)

The authors measure the temperature dependence of gain and amplified spontaneous power for both TE and TM modes in semiconductor laser amplifiers. Experiments are performed on three selected amplifier types, with higher TE, higher TM, and equal TE-TM gains, respectively. The gain differences are significantly reduced at higher temperature for the TE-dominant and TM-dominant amplifiers. For amplifiers with equal TE-TM gains, the TE and TM gains remain equal at high temperature. The measurements of the amplified spontaneous power show similar characteristics. More importantly, less polarization-sensitive gain characteristics can be obtained with some decrease in maximum gain by raising the operating temperature. The authors explain the experimental results by using the gain equations of the semiconductor laser amplifier.

• OSTI ID: 5937257
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 26:10; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
AMPLIFIERS
ELECTRONIC EQUIPMENT
EQUATIONS
EQUIPMENT
GAIN
LASERS
POLARIZATION
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
TEMPERATURE DEPENDENCE