Anomalous polarization characteristics of 1. 3-. mu. m InGaAsP buried heterostructure lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
The stimulated emission from lasers with a linear light-current characteristic is polarized in the TE mode. For some lasers with a kink in the L-I curve, the kink represents the onset of a higher order TM polarized stimulated emission. Both TE and TM modes are present above the kink. These TE and TM emissions usually have separate groups of longitudinal modes. Under pulsed operation, the TE mode appears before the TM mode. X-ray diffraction measurements suggest the presence of an internal stress in lasers exhibiting stimulated TM emission. A possible explanation for the observation is discussed. The mechanism is based on (i) higher optical gain of the TM mode than that of the TE mode in the presence of a compressive stress and (ii) larger reflectivity of the higher order TM modes. The power output at which a kink appears can be increased by decreasing the active layer width.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6613061
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Sun Jul 01 00:00:00 EDT 1984
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OSTI ID:6737670
Electro-optical effects of externally applied <100> uniaxial stress on InGaAsP 1. 3 and 1. 5. mu. m injection lasers
Journal Article
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Mon May 02 00:00:00 EDT 1988
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Sat Feb 28 23:00:00 EST 1987
· J. Appl. Phys.; (United States)
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OSTI ID:6945832
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
EMISSION
ENERGY-LEVEL TRANSITIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
POWER
REFLECTIVITY
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
STRESSES
SURFACE PROPERTIES
X-RAY DIFFRACTION
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
EMISSION
ENERGY-LEVEL TRANSITIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
OPTICAL MODES
OPTICAL PROPERTIES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
POWER
REFLECTIVITY
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
STRESSES
SURFACE PROPERTIES
X-RAY DIFFRACTION