Electro-optical effects of externally applied <100> uniaxial stress on InGaAsP 1. 3 and 1. 5. mu. m injection lasers

Journal Article · Mon May 02 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99098· OSTI ID:5276294

Swaminathan, V; Parayanthal, P; Hartman, R L

The changes in the polarization of the emission, spectrum, and light-current (L-I) behavior of a 1.3 and 1.5 ..mu..m InGaAsP channeled substrate buried heterostructure laser and double-channel planar buried heterostructure laser under an external uniaxial compressive stress perpendicular to the junction were studied at room temperature. It was found that the TM emission (electric vector perpendicular to the junction) reached threshold even at a stress level of approx.1 x 10/sup 8/ dyn cm/sup -2/. For stress less than or equal to4 x 10/sup 8/ dyn cm/sup -2/, the TM emission, although reaching threshold first, was found to exist only over a limited range of currents. At high currents only TE emission (electric vector parallel to the junction) was observed. The appearance of the TE emission gave rise to nonlinear L-I characteristics. When both TM and TE emissions were seen, the former occurred at a higher energy. The limited stability of TM emission with current at low stresses is explained by invoking spectral hole burning effects which reduce the gain saturation power for TM mode than the TE mode. At high stresses greater than or equal to4 x 10/sup 8/ dyn cm/sup -2/, the increased gain for TM-polarized light ensures its stability at all currents. From our results it can be concluded that to avoid TM emission, and the associated spectral changes and nonlinear L-I characteristics, the tensile stress in the plane of the active layer should be less than 10/sup 8/ dyn cm/sup -2/.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5276294
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
STRESSES