Effect of stress relaxation on polarization of InGaAsP buried heterostructure lasers by a repetitive temperature change

Journal Article · Sun Mar 01 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338069· OSTI ID:6945832

Yano, M; Kanno, Y; Ishikawa, H; Imai, H

This paper describes the effect of stress relaxation on the polarization of InGaAsP buried heterostructure lasers by means of a repetitive temperature change. We examine the change in the polarization ratio, TE mode power to TM mode power, under the repetitive temperature change. We find that the polarization ratio increases significantly for some lasers. This may be attributable to the relaxation of an external stress caused by bonding of the laser chip.

• Research Organization: Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya Atsugi 243-01, Japan
• OSTI ID: 6945832
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CURRENTS
ELECTRIC CURRENTS
HETEROJUNCTIONS
JUNCTIONS
LASERS
POLARIZATION
POWER
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STRESS RELAXATION
TEMPERATURE EFFECTS
THRESHOLD CURRENT