New experimental approach for studying the gain broadening mechanism in semiconductor lasers

Journal Article · Sun Mar 01 04:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329739· OSTI ID:6589045

Kawaguchi, H

The gain broadening mechanism in semiconductor lasers has not been clearly understood. This paper reports a new experimental approach for studying this mechanism. In this approach, the intensity of TE oscillating mode is reduced by a Glan-Thomson prism, and the amplified spontaneous emission of TM mode is spectrally resolved for InGaAsP/InP lasers. The gain broadening mechanism is considered by the measured intensity of transmitted power for constructive interference of TM mode. It is concluded that the homogeneous gain broadening mechanism is by far dominant in InGaAsP/InP lasers with undoped active region.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Midori-cho, Musashino-shi, Tokyo, 180 Japan
• OSTI ID: 6589045
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC EQUIPMENT
EMISSION
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFERENCE
LASERS
MATHEMATICAL MODELS
NUMERICAL DATA
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PRISMS
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
THEORETICAL DATA