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Fabrication of an all-refractory circuit using lift-off with image-reversal photoresist

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5922113
; ;  [1]
  1. Westinghouse Science and Technology Center, Pittsburgh, PA (US)
This paper reports on a four-stage shift register fabricated using Nb/Al-Al{sub 2}O{sub 3}/Nb Josephson junctions, Mo resistors, Nb transmission lines, and SiO{sub 2} insulating layers. The circuit had 36 junctions (5 {mu}m, 1000 A/cm{sup 3}) and 61 resistors (1.2 ohms/square), with a minimum feature size of 2 {mu}m. An eight-mask process was used in the fabrication. All material layers were deposited by sputtering. Patterning for all but one of the masking levels was done by lift-off using image reversal lithography in most cases. Lift-off avoided many of the problems common to reactive ion etching (RIE), including the need for etch stops, non-uniformity in etching, and the formation of organic residue (polymer) on the wafer.
OSTI ID:
5922113
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English