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Fabrication of 12-bit A/D converter using Nb/AlO sub x /Nb Josephson junctions

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6046167
; ; ;  [1]
  1. Westinghouse Science and Technology Center, Pittsburgh, PA (US)
This paper reports that for reliable fabrication of Nb/AlO{sub x}/Nb Josephson integrated circuits, combinations of anodization and reactive ion etching techniques were used to make various sizes of high quality Nb/AlO{sub x}/Nb Josephson tunnel junctions and J{sub c} as high as 5000 A/cm{sup 2} and V{sub m}(2 mV) as large as 60 mV at 4.2K. A ten-level process on Nb/AlO{sub x}/Nb trilayers with J{sub c} of 1500 A/cm{sup 2} was used to fabricate a functional 12-bit A/D converter. This circuit included 2.7 {mu}m diameter junctions defined by anodization and 5 {mu}m diameter junctions defined by reactive ion etching using Nb{sub 2}O{sub 5} and Al as etch stops. A lift-off process with image-reversal photoresist was used to define SiO{sub 2} insulators, Mo resistors and Au resistors.
OSTI ID:
6046167
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English