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Submicrometer Nb/AlO/sub x//Nb Josephson junction

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.341792· OSTI ID:7202423

High-quality, submicrometer Nb/AlO/sub x/ /Nb Josephson junctions were fabricated. The junction area was defined by anodizing an upper Nb electrode using a thin SiO/sub 2/ mask. By utilizing the anodized Nb as an etch stop during the reactive ion etching of the contact hole in an SiO/sub 2/ insulator, we could make a junction smaller than the contact hole size. Using stress-free Nb for the junction electrodes was crucial in achieving good current-voltage characteristics. High-quality Nb/AlO/sub x/ /Nb junctions as small as 0.7 ..mu..m square were produced. The quality parameter V/sub m/ was greater than 30 mV for a j/sub c/ of 6800 A/cm/sup 2/.

Research Organization:
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
OSTI ID:
7202423
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:3; ISSN JAPIA
Country of Publication:
United States
Language:
English