Sub-. mu. m, planarized, Nb-AlO sub x -Nb Josephson process for 125 mm wafers developed in partnership with Si technology

Journal Article · Mon Nov 11 04:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106405· OSTI ID:5150194

Ketchen, M B; Pearson, D; Kleinsasser, A W; Hu, C; Smyth, M; Logan, J; Stawiasz, K; Baran, E; Jaso, M; Ross, T; Petrillo, K; Manny, M; Basavaiah, S; Brodsky, S; Kaplan, S B; Gallagher, W J ^[1]; Bhushan, M ^[2]

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1. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York (USA)
2. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts (USA)

We have demonstrated a new planarized all-refractory technology for low {ital T}{sub {ital c}} superconductivity (PARTS). With the exception of the Nb-AlO{sub {ital x}}-Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state-of-the-art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical-mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5--100 {mu}m{sup 2}. Junction quality is excellent with the figure of merit {ital V}{sub {ital m}} typically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.

• OSTI ID: 5150194
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
INTEGRATED CIRCUITS
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MICROELECTRONIC CIRCUITS
MIM JUNCTIONS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SUPERCONDUCTING JUNCTIONS
TECHNOLOGY TRANSFER
TECHNOLOGY UTILIZATION
TRANSITION ELEMENTS