Niobium-stress influence on Nb/Al-oxide/Nb Josephson junctions
Journal Article
·
· J. Appl. Phys.; (United States)
Niobium-stress influence on Nb/Al-oxide/Nb trilayer Josephson-junction characteristics is studied. Different junction fabrication techniques are examined such as conventional etching and new lift-off processes. Nb-film stress, relaxed during trilayer etching, can deteriorate junction quality in etching-processed junctions smaller than a few micrometers square. Such deterioration does not occur in lift-off processed junctions even when they are 1 ..mu..m square because stress relaxation occurs during trilayer deposition through lift-off stencils. This new all-Nb Josephson-junction fabrication technique produces high-quality junctions with R/sub s//sub g//R/sub n//sub n/ = 24 (R/sub s//sub g/ and R/sub n//sub n/ are tunnel resistances at 2 and 4 mV, respectively) and a current uniformity of 1.5% for 100 1-..mu..m-square junctions connected in series.
- Research Organization:
- NTT LSI Laboratories, Morinosato Wakamiya 3-1, Atsugi-shi, Kanagawa, 243-01, Japan
- OSTI ID:
- 5485352
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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