Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
The structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54 ..mu..m are described. The laser has low threshold current (18 mA), high quantum efficiency (22% facet), high cw output power (42 mW/facet), and weak dependence of the threshold currents and efficiencies on cavity length.
- Research Organization:
- ATandT Bell Laboratories, Holmdel, New Jersey 07733-1988
- OSTI ID:
- 5914950
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:21; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Mon Jul 27 00:00:00 EDT 1987
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·
OSTI ID:6364104
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Journal Article
·
Sun Nov 26 23:00:00 EST 1989
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·
OSTI ID:5289752
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Journal Article
·
Mon Jul 16 00:00:00 EDT 1990
· Applied Physics Letters; (USA)
·
OSTI ID:6714816
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT