High power output 1. 48--1. 51. mu. m continuously graded index separate confinement strained quantum well lasers

Journal Article · Mon Jul 16 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103722· OSTI ID:6714816

Tanbun-Ek, T; Logan, R A; Olsson, N A; Temkin, H; Sergent, A M; Wecht, K W ^[1]

---

1. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (USA)

A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 {mu}m is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 {mu}m and a facet reflectivity of {similar to}5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.

• OSTI ID: 6714816
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:3; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
OPERATION
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM EFFICIENCY
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT