InGaAs/InAsPSb diode lasers with output wavelengths at 2. 52. mu. m

Journal Article · Mon Jan 08 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103049· OSTI ID:6985271

Martinelli, R U; Zamerowski, T J ^[1]

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1. David Sarnoff Research Center, CN 5300, Princeton, New Jersey 08450 (US)

We have studied InGaAs/InAsPSb double heterojunction, oxide stripe lasers grown by hydride vapor phase epitaxy. At 80 K the threshold current density is 0.4 kA/cm{sup 2}, the staturated output power is about 4 mW, and the differential quantum efficiency just above threshold is 20% per facet. The output wavelength increases from 2.44 {mu}m at 80 K to 2.52 {mu}m at 190 K. A layer of compositionally graded InGaAs accommodates the 2% lattice mismatch between the InP substrate and the laser structure. The operating characteristics of these lasers are compared with those of InGaAs/InAsP lasers. Their improved performance results from the better electrical and optical confinement of the InAsPSb cladding layers.

• OSTI ID: 6985271
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CLADDING
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LOW TEMPERATURE
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD CURRENT
VAPOR PHASE EPITAXY