Extremely high power 1. 48 [mu]m GaInAsP/InP GRIN-SCH strained MQW lasers

Journal Article · Sat Jan 01 04:00:00 UTC 1994 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.265872· OSTI ID:7207305

Kasukawa, A; Namegaya, T; Iwai, N; Yamanaka, N; Ikegami, Y; Tsukiji, N ^[1]

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1. Furukawa Electric Co., Ltd., Yokohama (Japan). Yokohama R D Lab.

A record CW output power of 360 mW at 25 C was achieved by investigating the structure of optical confinement layer in 1.48 [mu]m GRIN-SCH MQW lasers. It is experimentally demonstrated that the use of a wide bandgap and thin SCH layer gives a high differential quantum efficiency without expense of threshold current. Low driving currents, 195 mA for 100 mW, 450 mA for 200 mW and 890 mA for 300 mW, were obtained in the optimized cavity lengths.

• OSTI ID: 7207305
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 6:1; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
DATA
DESIGN
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASER CAVITIES
LASERS
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS