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1/f noise: A nondestructive technique to predict MOS radiation hardness

Conference ·
OSTI ID:5911809

We find a strong correlation between the preirradiation 1/f noise of pMOS transistors and their radiation hardness. This suggests that current fluctuations may provide a useful, nondestructive probe of defects in MOS devices. 18 refs., 4 figs., 1 tab.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5911809
Report Number(s):
SAND-89-0379C; CONF-890723-3; ON: DE89007419
Country of Publication:
United States
Language:
English

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