1/f noise: A nondestructive technique to predict MOS radiation hardness
Conference
·
OSTI ID:5911809
We find a strong correlation between the preirradiation 1/f noise of pMOS transistors and their radiation hardness. This suggests that current fluctuations may provide a useful, nondestructive probe of defects in MOS devices. 18 refs., 4 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5911809
- Report Number(s):
- SAND-89-0379C; CONF-890723-3; ON: DE89007419
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
MATERIALS TESTING
MOS TRANSISTORS
NOISE
NONDESTRUCTIVE TESTING
PHYSICAL RADIATION EFFECTS
POST-IRRADIATION EXAMINATION
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
MATERIALS TESTING
MOS TRANSISTORS
NOISE
NONDESTRUCTIVE TESTING
PHYSICAL RADIATION EFFECTS
POST-IRRADIATION EXAMINATION
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS