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Physical basis for nondestructive tests of MOS radiation hardness

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5707755
 [1];  [2]
  1. Dept. of Physics, Oberlin College, Oberlin, OH (US)
  2. Sandia National Labs., Albuquerque, NM (United States)
+ Show Author Affiliations

The authors have found that the 1/f noise and channel resistance of unirradiated nMOS transistors from a single lot with various gate-oxide splits closely correlate with the oxide-trap and interface trap charge, respectively, following irradiation. In this paper the 1/f noise is explained by a trapping model, while the variations in channel resistance are explained by scattering from interface-trap precursor defects. It appears that both noise and channel mobility measurements may be useful in defining nondestructive hardness assurance test methods for devices fabricated from a single technology. It may be difficult to use either for making cross-technology comparisons. Finally, during the course of this study it was found that process techniques that improve the radiation hardness of MOS devices at room temperature can greatly reduce the 1/f noise of MOS devices at cryogenic temperatures.

OSTI ID:
5707755
Report Number(s):
CONF-910751--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
661320 -- Auroral
Ionospheric
& Magnetospheric Phenomena-- (1992-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYOGENICS
FLUCTUATIONS
HARDENING
HARDNESS
INTERFACES
MATERIALS TESTING
MECHANICAL PROPERTIES
MOS TRANSISTORS
NONDESTRUCTIVE TESTING
PHYSICAL RADIATION EFFECTS
PRECURSOR
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SIGNAL-TO-NOISE RATIO
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TESTING
TRANSISTORS
TRAPS
VARIATIONS