Energy deposition in gallium arsenide. Final report
This report pertains to the single-event-upset phenomena in microelectronic circuits with emphasis on those resulting from nuclear reactions induced by energetic protons. The goal is to understand the detailed physical mechanisms leading to SEUs sufficiently to put calculating SEUs on a sound quantitative basis. The author previously had considerable success in predicting the charge generation in well defined slabs of silicon. The purpose of this contract was to try extending the model and the associated simulation codes to GaAs and to begin the experimental measurements necessary to test them. The Clarkson Nuclear Reaction models were modified to handle proton-induced nuclear reactions in gallium arsenide. The codes were immediately useful in analyzing the significance that the edge-effect phenomena, discovered in microbeam studies of GaAs gates, would play in increasing the SEU rates for GaAs memories. Techniques were developed using these codes for calculating SEU rates for select circuits flown in space. Two of these circuits, the 2901B and the 93L422, are responsible for SEU problems aboard US satellites. Charge-collection Measurements were carried out using the GaAs Fat-FET test structures from the Rockwell memories.
- Research Organization:
- Clarkson Univ., Potsdam, NY (USA)
- OSTI ID:
- 5907162
- Report Number(s):
- AD-A-162823/9/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360105* -- Metals & Alloys-- Corrosion & Erosion
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DEPOSITION
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
NUCLEAR MODELS
NUCLEAR REACTIONS
NUCLEONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SIMULATION
TRANSISTORS