Charge collection in partially depleted GaAs test structures induced by alphas, heavy ions, and protons

Journal Article · Tue Jan 01 04:00:00 EST 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347688· OSTI ID:6196120

El-Teleaty, S; Abdel-Kader, W G; McNulty, P J; Yaktieen, M H ^[1]

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1. Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-1911 (US)

Charge-collection measurements on test structures were carried out for events induced by alphas, heavy ions, and proton-induced nuclear reactions over a variety of bias values and for two doping levels. Analysis of charge-collection pulse-height spectra provides the shape and dimensions of the sensitive volume associated with the single-event upset (SEU) sensitive junctions. The critical charge is determined by the circuit design. The critical charge and the dimensions of the sensitive volume are required by all the existing codes dealing with the calculation of SEU rates in natural space environments. The dimensions of the sensitive volume determined for some Rockwell GaAs test structures were used in simulations of charge collection by proton-induced nuclear reactions using the Clemson University Proton Interactions in Devices codes. Comparison of the results with experimental data yields agreement.

• OSTI ID: 6196120
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CHARGE COLLECTION
CHARGED PARTICLES
COLLISIONS
COMPUTERIZED SIMULATION
DOPED MATERIALS
ELEMENTARY PARTICLES
FERMIONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
HEAVY IONS
ION COLLISIONS
IONS
MATERIALS
NUCLEONS
PNICTIDES
PROTONS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS