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Charge collection in HI/sup 2/L bipolar transistors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6166355

Charge collection measurements were carried out on HI/sup 2/L transistors in GaAs in order to determine the thickness of the equivalent sensitive volume to be used in calculating SEU rates for this technology and to set a new lower limit to the critical charge. The measurements were in the form of pulse-height spectra measured between the base-emitter and collector-emitter contacts upon exposure to energetic protons, alphas, and sulfur ions. The sulfur data is consistent with the SEU-sensitive junction being the base-emitter junction with an equivalent sensitive volume of thickness 0.1 ..mu..m for high LET particles. Comparison of the proton charge-collection data with earlier SEU measurements results in a revision of our estimate of the lower limit to the critical charge for HI/sup 2/L gate arrays to a value which is higher than previous estimates by more than a factor of two. The combination of reduced charge collection and higher critical charge implies that this technology will be considerably harder to SEUs than previously believed.

Research Organization:
Clarkson Univ., Potsdam, NY (US); Univ. of Arizona, Tucson, AZ (US); Texas Instruments, Dallas, TX (US)
OSTI ID:
6166355
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English