Charge collection in HI/sup 2/L bipolar transistors
Charge collection measurements were carried out on HI/sup 2/L transistors in GaAs in order to determine the thickness of the equivalent sensitive volume to be used in calculating SEU rates for this technology and to set a new lower limit to the critical charge. The measurements were in the form of pulse-height spectra measured between the base-emitter and collector-emitter contacts upon exposure to energetic protons, alphas, and sulfur ions. The sulfur data is consistent with the SEU-sensitive junction being the base-emitter junction with an equivalent sensitive volume of thickness 0.1 ..mu..m for high LET particles. Comparison of the proton charge-collection data with earlier SEU measurements results in a revision of our estimate of the lower limit to the critical charge for HI/sup 2/L gate arrays to a value which is higher than previous estimates by more than a factor of two. The combination of reduced charge collection and higher critical charge implies that this technology will be considerably harder to SEUs than previously believed.
- Research Organization:
- Clarkson Univ., Potsdam, NY (US); Univ. of Arizona, Tucson, AZ (US); Texas Instruments, Dallas, TX (US)
- OSTI ID:
- 6166355
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHARGE COLLECTION
CHARGED PARTICLES
CHARGED-PARTICLE TRANSPORT
ENERGY TRANSFER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONS
LET
PNICTIDES
PROTON TRANSPORT
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SULFUR IONS
TRANSISTORS