Charge collection and SEU sensitivity for Ga/As bipolar devices

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7167333

Yaktieen, M H; McNulty, P J; Lynch, J E; Roth, D R ^[1]; Salzman, J F; Yuan, J H ^[2]

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1. Dept. of Physics and Astronomy, Clemson Univ., Clemson, SC (US)
2. Texas Instruments, Dallas, TX (US)

This paper reports charge collection measured across the base-emitter heterojunction to test certain assumptions of the standard sensitive volume models for calculating SEU rates. The observed dependence of charge collection on the LET (linear energy transfer) and the angle of incidence of alphas and 20 MeV Oxygen ions is consistent with the hypothesis that the charge collected equals the product of LET and pathlength through a sensitive volume of fixed dimensions. The data suggest that the switch from MBE to MOCVD processing resulted in an increase in the thickness of the sensitive volume from 0.11 to 0.25 microns.

• OSTI ID: 7167333
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA SOURCES
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHARGE COLLECTION
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY TRANSFER
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
HETEROJUNCTIONS
ION SOURCES
IONS
JUNCTIONS
LET
MOLECULAR BEAM EPITAXY
OXYGEN IONS
PARTICLE SOURCES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATION SOURCES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING