Single event upsets in gallium arsenide pseudo-complementary MESFET logic

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488786· OSTI ID:203704

Fouts, D J; Wolfe, K; Van Dyk, S E ^[1]; Weatherford, T R ^[2]; McMorrow, D; Melinger, J S; Tran, L H; Campbell, A B ^[3]

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1. Naval Postgraduate School, Monterey, CA (United States). Dept. of Electrical and Computer Engineering
2. SFA Inc., Landover, MD (United States)
3. Naval Research Lab., Washington, DC (United States)

An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL.

• OSTI ID: 203704
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DATA ANALYSIS
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
LOGIC CIRCUITS
PHYSICAL RADIATION EFFECTS
SPACE FLIGHT