Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films
Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 5904
- Report Number(s):
- SAND99-0994J; TRN: AH200115%%132
- Journal Information:
- Thin Solid Films, Other Information: Submitted to Thin Solid Films; PBD: 21 Apr 1999
- Country of Publication:
- United States
- Language:
- English
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