Synthesis of c-axis oriented AlN thin films on different substrates: A review
- Instituto de Sistemas Optoelectronicos y Microtecnologia, ETSI de Telecomunicacion Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N{sub 2} gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.
- OSTI ID:
- 22207359
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 9 Vol. 45; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering
AlN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices