Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films
Abstract
Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 5904
- Report Number(s):
- SAND99-0994J
TRN: AH200115%%132
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article
- Journal Name:
- Thin Solid Films
- Additional Journal Information:
- Other Information: Submitted to Thin Solid Films; PBD: 21 Apr 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; PIEZOELECTRICITY; RUTHENIUM; TITANIUM; CHEMICAL REACTIONS; DEPOSITION; SUBSTRATES; ELECTRICAL PROPERTIES; RESPONSE FUNCTIONS
Citation Formats
Clem, P G, Dimos, D B, Gonzales, D M, Ruffner, J A, and Tuttle, B A. Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films. United States: N. p., 1999.
Web.
Clem, P G, Dimos, D B, Gonzales, D M, Ruffner, J A, & Tuttle, B A. Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films. United States.
Clem, P G, Dimos, D B, Gonzales, D M, Ruffner, J A, and Tuttle, B A. 1999.
"Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films". United States. https://www.osti.gov/servlets/purl/5904.
@article{osti_5904,
title = {Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films},
author = {Clem, P G and Dimos, D B and Gonzales, D M and Ruffner, J A and Tuttle, B A},
abstractNote = {Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film.},
doi = {},
url = {https://www.osti.gov/biblio/5904},
journal = {Thin Solid Films},
number = ,
volume = ,
place = {United States},
year = {Wed Apr 21 00:00:00 EDT 1999},
month = {Wed Apr 21 00:00:00 EDT 1999}
}