Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

Journal Article · Mon Nov 26 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4768951· OSTI ID:22089523

Schneider, M.; Bittner, A.; Patocka, F.; Schmid, U. ^[1]; Stoeger-Pollach, M. ^[2]; Halwax, E. ^[3]

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1. Department for Microsystems Technology, Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria)
2. University Service Center for Transmission Electron Microscopy (USTEM), Vienna University of Technology, Wiedner Hauptstrasse 8-10/052, 1040 Vienna (Austria)
3. Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9, A-1060 Vienna (Austria)

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.

• OSTI ID: 22089523
• Journal Information: Applied Physics Letters, Vol. 101, Issue 22; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM NITRIDES
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
INTERFACES
LEAKAGE CURRENT
MICROSTRUCTURE
PIEZOELECTRICITY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION