Effects of annealing temperature on microstructure and electrical and optical properties of radio-frequency-sputtered tin-doped indium oxide films

Journal Article · Fri Mar 31 19:00:00 EST 1989 · Journal of the American Ceramic Society; (USA)

DOI:https://doi.org/10.1111/j.1151-2916.1989.tb06201.x· OSTI ID:5900735

Na, J G; Cho, Y R; Kim, Y H; Lee, T D ^[1]; Park, S J ^[2]

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1. Korea Advanced Inst. of Science and Technology, Cheongryang, Seoul (KR)
2. Seoul National Univ., Shillim-dong, Seoul (KR)

Indium tin oxide (ITO) films (0.3 {mu}m thick), with a doping level of 28 mol% SnO{sub 2}, were prepared by a radio frequency magnetron sputtering method. The effects of postannealing on the microstructure and the electrical properties of the ITO films were investigated. Examination by TEM shows that the postannealing treatment induced SnO{sub 2} precipitates along the grain boundaries. The resistivity increased with increasing postannealing temperatures. The mobility of carriers appears to be responsible for the resistivity increase in these specimens.

• OSTI ID: 5900735
• Journal Information: Journal of the American Ceramic Society; (USA), Journal Name: Journal of the American Ceramic Society; (USA) Vol. 72:4; ISSN 0002-7820; ISSN JACTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
640302 -- Atomic
Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARRIER MOBILITY
CHALCOGENIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM OXIDES
MICROSTRUCTURE
MOBILITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RF SYSTEMS
SPUTTERING
TEMPERATURE EFFECTS
THIN FILMS