Properties of tin doped indium oxide thin films prepared by magnetron sputtering

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332415· OSTI ID:5931278

Ray, S; Banerjee, R; Basu, N; Batabyal, A K; Barua, A K

Indium tin oxide (ITO) films have been prepared by the magnetron sputtering technique from a target of a mixture of In/sub 2/O/sub 3/ and SnO/sub 2/ in the proportion 9:1 by weight. By optimizing the deposition conditions it has been possible to produce highly transparent (transmission approx.90%) and conducting (resistivity approx.10/sup -5/ ..cap omega.. cm) ITO films. A resistivity approx.10/sup -4/ ..cap omega.. cm has been obtained for films of thickness approx.1000 A at a comparatively low substrate temperature of 50 /sup 0/C and without using oxygen in the sputtering chamber. To characterize the films, the following properties have been studied, viz., electrical conductivity, thermoelectric power, Hall effect, optical transmission, and band gap. The effect of annealing in air and vacuum on the properties of the films have also been studied.

• Research Organization: Indian Association for the Cultivation of Science, Calcutta-700 032, India
• OSTI ID: 5931278
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
CHALCOGENIDES
DATA
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ENERGY GAP
EQUIPMENT
EXPERIMENTAL DATA
FILMS
HALL EFFECT
INDIUM COMPOUNDS
INDIUM OXIDES
INFORMATION
MAGNETRONS
MEDIUM TEMPERATURE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NUMERICAL DATA
OPTICAL PROPERTIES
OPTIMIZATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUANTITY RATIO
SPUTTERING
THERMOELECTRIC PROPERTIES
THICKNESS
THIN FILMS
TIN ADDITIONS
TIN ALLOYS
TIN COMPOUNDS
TIN OXIDES
TRANSMISSION