Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputtering
Journal Article
·
· Appl. Phys. Lett.; (United States)
High-quality 800-A-thick films of tin-doped indium oxide have been prepared by magnetron sputtering. It is shown that films with low resistivity (approx.4 x 10/sup -4/ ..cap omega.. cm) and high optical transmission (>85% between 4000 and 8000 A) can be prepared on low-temperature (40--180 /sup 0/C) substrates with O/sub 2/ partial pressures of (2--7) x 10/sup -5/ Torr.
- Research Organization:
- National Research Council of Canada, Ottawa, Canada K1A 0R6
- OSTI ID:
- 5315363
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 37:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
INDIUM OXIDES
FABRICATION
SPUTTERING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
FILMS
HIGH TEMPERATURE
HIGH VACUUM
MAGNETRONS
MEDIUM TEMPERATURE
OPACITY
OXYGEN
SUBSTRATES
TIN OXIDES
CHALCOGENIDES
CRYOGENIC FLUIDS
DATA
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
FLUIDS
INDIUM COMPOUNDS
INFORMATION
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
TIN COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
INDIUM OXIDES
FABRICATION
SPUTTERING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
FILMS
HIGH TEMPERATURE
HIGH VACUUM
MAGNETRONS
MEDIUM TEMPERATURE
OPACITY
OXYGEN
SUBSTRATES
TIN OXIDES
CHALCOGENIDES
CRYOGENIC FLUIDS
DATA
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
FLUIDS
INDIUM COMPOUNDS
INFORMATION
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
TIN COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication