Scattering theory of electrons on impurities in compensated semiconductors

Journal Article · Fri Apr 01 04:00:00 EST 1988 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:5888307

Dzhakeli, V G; Kachlishvili, Z S

We study the temperature behavior of the electron mobility in n-type compensated semiconductors, caused by scattering on neutral, ionized, and dipole impurity centers. With increased temperature, neutral impurity atoms and paired oppositely charged door-acceptor dipole scattering impurity centers transform into separate ionic scattering centers. These transformations of scattering centers take place at various temperatures. We find that the mobility caused by electron scattering on separate impurity ions does not change with temperature monotonically - there appear two minima under certain conditions.

• Research Organization: Tbilisi State Univ. (USSR)
• OSTI ID: 5888307
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 30:10; ISSN SOPJA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
IONIZATION
LEPTONS
MATERIALS
MATHEMATICAL MODELS
MOBILITY
N-TYPE CONDUCTORS
PARTICLE MOBILITY
PHONONS
PNICTIDES
QUASI PARTICLES
RELAXATION TIME
SCATTERING
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE