Donor-acceptor pair scattering in compensated semiconductors
The drift and Hall mobilities have been calculated for the scattering of electrons from donor-acceptor pairs in a nondegenerate semiconductor. The separation between donor and acceptor has been correlated via a nearest-neighbor distribution function and the impurity potentials modeled as screened coulomb interactions. By utilizing Alfred's (Phys. Status Solidi B 82, 467 (1977)) temperature-dependent dielectric function, the mobility in the high- and low-temperature regimes is obtained and compared with the dipole approximation of pair scattering in the Born approximation. The random pair approximation exceeds the dipole mobility by orders of magnitude for moderate dopant levels of, e.g., the order of 10/sup 16/ cm/sup -3/, and temperatures greater than 30 /sup 0/K, indicating that the dipole approximation may be inadequate for most applications of interest.
- Research Organization:
- Department of Physics, Eastern Oregon State College, La Grande, Oregon 97850
- OSTI ID:
- 6127613
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORN APPROXIMATION
CHARGED-PARTICLE TRANSPORT THEORY
DIELECTRIC TENSOR
ELECTRON DRIFT
ELECTRON MOBILITY
IMPURITIES
MATERIALS
MOBILITY
PARTICLE MOBILITY
SCATTERING
SEMICONDUCTOR MATERIALS
TENSORS
TRANSPORT THEORY