Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.1906· OSTI ID:527013

Itoh, K M; Kinoshita, T; Muto, J ^[1]; Haegel, N M ^[2]; Walukiewicz, W; Dubon, O D; Beeman, J W ^[3]; Haller, E E ^[4]

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1. Department of Instrumentation Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223 (Japan)
2. Department of Physics, Fairfield University, Fairfield, Connecticut 06430 (United States)
3. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
4. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible. {copyright} {ital 1997} {ital The American Physical Society}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 527013
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 4 Vol. 56; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BERYLLIUM
CARRIER MOBILITY
CROSS SECTIONS
CRYSTAL DOPING
GERMANIUM
IMPURITIES
MERCURY
SCATTERING
SEMICONDUCTOR MATERIALS
ZINC