Neutral-impurity scattering in isotopically engineered Ge

Journal Article · Thu Dec 15 04:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.16995· OSTI ID:6769128

Itoh, K M ^[1]; Walukiewicz, W; Fuchs, H D; Beeman, J W ^[2]; Haller, E E ^[1]; Farmer, J W ^[3]; Ozhogin, V I ^[4]

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1. University of California at Berkeley, Berkeley, California 94720 (United States) Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
3. University of Missouri, Columbia, Missouri 65211 (United States)
4. Kurchatov Institute of Atomic Energy, 123182 Moscow (Russian Federation)

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6769128
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:23; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
CARRIER MOBILITY
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EVEN-EVEN NUCLEI
GALLIUM ADDITIONS
GALLIUM ALLOYS
GERMANIUM 70
GERMANIUM 74
GERMANIUM ISOTOPES
HALL EFFECT
IMPURITIES
INTERMEDIATE MASS NUCLEI
ISOTOPES
MEAN FREE PATH
MOBILITY
MONOCRYSTALS
NUCLEI
PHYSICAL PROPERTIES
SCATTERING
STABLE ISOTOPES