Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

Journal Article · Mon May 19 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96918· OSTI ID:5885091

Lowndes, D H; Jellison, Jr, G E; Pennycook, S J; Withrow, S P; Mashburn, D N

Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5885091
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CRYSTALLIZATION
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
ION IMPLANTATION
LASER RADIATION
MELTING
MICROSCOPY
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILICON
SOLIDIFICATION
SURFACE PROPERTIES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
VELOCITY