Time resolved studies of rapid solidification in highly undercooled molten silicon

Journal Article · Tue Jan 01 04:00:00 EST 1985 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6947346

Lowndes, D H; Jellison, Jr, G E; Wood, R F; Pennycook, S J; Carpenter, R W

A KrF (248nm) pulsed laser was used to melt 90-, 190-, and 440nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 nm and 1.15 ..mu..m) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. The time-resolved measurements provide new experimental information about the nucleation of fine-grained Si crystallites in undercooled liquid Si, at low laser energy densities (E/sub l/), and about the growth of large-grained Si in the near-surface region at higher E/sub l/. Measurements with the infrared probe beam reveal the presence of a buried, propagating liquid layer at low E/sub l/. Model calculations indicate that this liquid layer is generated in part by the release of latent heat associated with the nucleation and growth process. 8 references, 4 figures.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6947346
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 35; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
EXCIMER LASERS
EXPERIMENTAL DATA
GAS LASERS
GRAIN GROWTH
INFORMATION
KRYPTON FLUORIDE LASERS
LASER RADIATION
LASERS
NUCLEATION
NUMERICAL DATA
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILICON
SOLIDIFICATION
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
TIME DEPENDENCE